Projection exposure apparatus and device manufacturing method

ABSTRACT

A device manufacturing method includes steps of providing a projection exposure apparatus that includes an illumination optical system for illuminating an original with light from a light source and a projection optical system for projecting a pattern of the original, illuminated with the light, onto a substrate to be exposed, transferring a device pattern of one of a mask and a reticle onto a resist of a wafer by use of the projection exposure apparatus, and developing the wafer having the device pattern transferred thereto. The illumination optical system includes an optical integrator having a plurality of lenses and a movable transparent substrate disposed juxtaposed to a light entrance surface of the optical integrator and being movable in a direction intersecting an optical axis. The transparent substrate has a light quantity adjusting film formed thereon for blocking a portion of light directed to at least one lens of the plurality of lenses to thereby change a light quantity distribution on the at least one lens so as to change an illuminance distribution on a plane to be illuminated.

This application is a divisional of Application Ser. No. 09/066,840,filed Apr. 28, 1998. now U.S. Pat. No. 6,281,964

FIELD OF THE INVENTION AND RELATED ART

This invention relates to a projection exposure apparatus and a devicemanufacturing method. Particularly, the invention is suitably usable forthe manufacture of large integration devices (semiconductor devices) ofsubmicron or quarter-micron linewidth, such as ICs, LSIS, CCDs or liquidcrystal panels, for example, through projection exposure wherein apattern of a first object such as a mask or reticle is illuminated withlight of a uniform illuminance distribution so that the pattern of thefirst object is transferred to a second object such as a silicon orglass wafer in accordance with a step-and-repeat method or step-and-scanmethod.

In projection exposure apparatuses for the manufacture of semiconductordevices, a reticle on which an electronic circuit pattern is formed isilluminated with light from an illumination system, and the pattern isprojected and transferred to the surface of a wafer through a projectionoptical system. To provide improved resolution, it may be a factor forilluminating the wafer surface uniformly.

In illumination systems for such projection exposure apparatus, variousmeasures may be adopted to assure illumination of a surface, to beilluminated (such as a reticle surface or wafer surface), uniformly. Asan example, a projection exposure apparatus called a stepper may use anillumination system having a combination of an optical integrator,comprising small lenses arrayed two-dimensionally at a predeterminedpitch, with a collimator lens, to illuminate the surface uniformly.

With the use of such an optical integrator in an illumination system, aplurality of secondary light sources corresponding to the number ofsmall lenses are defined, and the surface to be illuminated isilluminated with lights from the secondary light sources, with theselights being superposed one upon another by means of the collimatorlens. This is effective to provide a uniform illuminance distributionupon the surface to be illuminated, such as a mask surface or reticlesurface.

Generally, non-uniformness of illuminance distribution on a surface tobe illuminated, when the illuminance non-uniformness is S, the maximumof illuminance level upon the surface to be illuminated is Smax, and theminimum of it is Smin, is expressed as follows:

S=(Smax−Smin)/(Smax+Smin).

Generally, in conventional projection exposure apparatuses, suchnon-uniformness of illuminance upon a surface to be illuminated is keptnot greater than a few percent.

Another example is a method used in recent projection exposureapparatuses that distortion of a condenser lens is adjusted to correct auniform illuminance distribution on a surface to be illuminated.Further, Japanese Laid-Open Patent Application, Laid-Open No. 42821/1989proposes the use of light blocking members disposed at light entrancesurfaces of some of small lenses, constituting an optical integrator,for blocking light impinging on these small lenses, to provide a uniformilluminance distribution on a surface to be illuminated.

The manufacture of semiconductor devices of large integration such asrecent VLSIs, for example, requires very high uniformness of illuminancein circuit pattern printing.

It is known that, when the numerical aperture of a projection opticalsystem of a projection exposure apparatus is NA and a wavelength used isλ, the resolution RP and the depth of focus DOF can be expressed by thefollowing equations:

RP=k1(λ/NA)  (1)

DOF=k2(λ/NA2)  (2)

where k1 and k2 are constants corresponding to a process, for example.In conventional illumination methods, when the numerical aperture of aprojection optical system is NA_(po) and the numerical aperture of anillumination optical system is NA_(il), the following parameter is anindex of resolution:

σ=NA_(il)/NA_(po)  (3).

Conventionally, this σvalue is fixed to be about 0.5, and illuminancenon-uniformness is reduced at this σ value, whereby desired resolutionis obtained.

However, in the manufacture of recent VLSIs, a further improvement ofresolution is required for projection exposure apparatuses.

It is seen from equations (1) and (2) that, for an increase ofresolution RP, λ may be made smaller (shorter) and the numericalaperture NA_(po), of the projection optical system may be made larger.However, it leads to a decrease of depth of focus DOF.

For balancing of these contradictory factors, ultra-resolution imagingmethods, called a grazing incidence illumination method or a phase shiftmask method, have been proposed. In such an illumination method or phaseshift method, an aperture stop of an illumination optical system ischanged to make the σ value smaller, or secondary light sources of apeculiar shape such as a ring-zone like shape or quadruple-pole shape,for example, are used.

For such illumination methods, in many projection exposure apparatuses,positions of various components of an illumination system are adjustedso that the illuminance non-uniformness becomes smallest in a certainstandard illumination mode (illumination mode A). However. if theillumination mode is changed to another illumination mode (illuminationmode B) of a small σ value, based on the grazing incidence illuminationmethod or a phase shift method, for example, sufficient reduction ofilluminance non-uniformness is not always attainable with the samestructure or disposition of the components of the illumination system.

Further, in a projection exposure apparatus, there are cases where flareoccurs due to reflection among a wafer surface, a reticle surface, aprojection optical system and an illumination optical system, which maycause a non-uniform illuminance distribution on the surface to beilluminated. The amount of such flare changes with the transmissionfactor of a reticle or a reflection factor of a wafer. It is difficultin conventional projection exposure apparatuses to correct a non-uniformilluminance distribution due to flare to provide a uniform illuminancedistribution.

SUMMARY OF THE INVENTION

It is an object of the present invention to provide an improvedprojection exposure apparatus and/or device manufacturing method bywhich the illuminance distribution can be adjusted.

In accordance with an aspect of the present invention, there is provideda projection exposure apparatus, comprising: an illumination opticalsystem for illuminating an original with light from a light source; anda projection optical system for projecting a pattern of the original,illuminated with the light onto a substrate to be exposed; wherein saidillumination optical system includes an optical integrator having aplurality of lenses, and a movable member disposed at a light entranceside of said optical integrator and being movable in a directionintersecting an optical axis, said movable member having light quantityadjusting means for blocking a portion of light directed to a lens ofsaid plurality of lenses to thereby change a light quantitydistribution.

The direction intersecting the optical axis may be a directionperpendicular to the optical axis.

The movable member may be movable also in a direction of the opticalaxis.

The movable member may include a plurality of light quantity adjustingmeans each of which is provided in relation with an associated one ofdifferent lenses of said plurality of lenses.

In one preferred form of the present invention, the position of themovable member with respect to the direction perpendicular to theoptical axis is changed to correct asymmetry of an illuminancedistribution, with respect to the optical axis, upon a mask, a reticleor a wafer. The position of the movable member with respect to theoptical axis direction may be changed to correct an illuminancedifference, upon a mask, a reticle or a wafer, between a region close tothe optical axis and a region remote from the optical axis. Thesecorrections may be performed on the basis of a measurement of anilluminance distribution on the mask, the reticle or the wafer. Themeasurement and correction may be made once or plural times until adesired illuminance distribution is provided. Once the position of themovable member with respect to the optical axis direction and theposition thereof with respect to the direction perpendicular to theoptical axis, with which a desired illuminance distribution can beprovided on the mask, the reticle or the wafer, are determined, theposition of the movable member with respect to the optical axisdirection and the position thereof with respect to the directionperpendicular to the optical axis may conveniently be memorized intomemory means.

These and other objects, features and advantages of the presentinvention will become more apparent upon a consideration of thefollowing description of the preferred embodiments of the presentinvention taken in conjunction with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic view of a main portion of a projection exposureapparatus according to a first embodiment of the present invention.

FIGS. 2A and 2B are schematic views for explaining the positionalrelation of an ND filter and an optical integrator, in the embodiment ofFIG. 1.

FIGS. 3A, 3B and 3C are schematic views, respectively, for explaining anexample of a changing characteristic of an illuminance distribution on asurface to be illuminated, in the first embodiment of FIG. 1.

FIGS. 4A, 4B, 4C and 4D are schematic views, respectively, forexplaining an example of a changing characteristic of an illuminancedistribution on a surface to be illuminated, when in the firstembodiment of FIG. 1 the ring-zone illumination is used.

FIG. 5 is a schematic view for explaining an example of lightinterception at a stop 7 in ring-zone illumination, in the embodiment ofFIG. 1.

FIG. 6 is a flow chart for explaining the procedure of illuminancenon-uniformness correction as an ND filter in FIG. 1 is moved along aplane perpendicular to the optical axis.

FIGS. 7A, 7B. 7C and 7D are schematic views, respectively, forexplaining the procedure of illuminance non-uniformness correction as anND filter in FIG. 1 is moved along a plane perpendicular to the opticalaxis.

FIG. 8 is a flow chart for explaining the procedure of illuminancenon-uniformness correction as an ND filter in FIG. 1 is moved along theoptical axis.

FIGS. 9A, 9B, 9C and 9D are schematic views, respectively, forexplaining the procedure of illuminance non-uniformness correction as anND filter in FIG. 1 is moved along the optical axis.

FIGS. 10A, 10B, 10C and 10D are schematic views, respectively, forexplaining examples of ND filters usable in the present invention.

FIG. 11 is a schematic view for explaining an example of a combinationof ND filters in FIGS. 10A-10D, and a correction shape.

FIG. 12 is a flow chart of device manufacturing processes in accordancewith the present invention.

FIG. 13 is a flow chart of a wafer process, in the procedure of FIG. 12.

FIG. 14 is a flow chart for explaining a procedure according to thefirst embodiment of the present invention.

FIGS. 15A, 15B, 15C and 15D are schematic views, respectively, forexplaining an ND filter and an optical integrator.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

FIG. 1 is a schematic view of a main portion of a first embodiment ofthe present invention. In this embodiment, the invention is applied to aprojection exposure apparatus of a step-and-repeat type or step-and-scantype, for lithography with a resolution of submicron or quarter-micronorder or higher.

Denoted in the drawing at 2 is an elliptical mirror, and denoted at 1 isa light source which comprises a light emitting tube. It has a highluminance light emission point 1 a for providing ultraviolet rays ordeep ultraviolet rays. The light emitting point 1 a is disposed at afirst focal point of the elliptical mirror 2 or in the neighborhoodthereof. Denoted at 3 is a cold mirror having a multilayered film, fortransmitting most of infrared light and for reflecting most ofultraviolet light.

The elliptical mirror 2 serves to form an image (light source image) 1 bof the light emitting point 1 a at a second focal point thereof or inthe neighborhood thereof, through cooperation with the cold mirror 3.

Denoted at 5 is an optical system which comprises a condenser lens, acollimator lens and/or a zoom lens, for example. It serves to image thelight source image 1 b, formed at or adjacent to the second focal point,on a light entrance surface 6 a of an optical integrator 6 inassociation with light from a quantity controlling member (lightquantity control means) 17 which restricts the quantity of light to bepassed therethrough. The optical integrator 6 comprises a plurality ofsmall lenses (fly's eye lenses) 6 _(i) (i=1 to N) having a rectangularsectional shape which are arrayed two-dimensionally with a predeterminedpitch, along a direction intersecting the optical axis La. It serves toproduce secondary light sources in the neighborhood of a light exitsurface 6 b thereof.

The light quantity controlling member 17 is disposed adjacent to thelight entrance surface 6 a of the optical integrator 6, and it ismovable along a plane (X-Y plane) perpendicular to the optical axis Laof the optical system (illumination system) 5, as well as in thedirection of optical axis La and in a direction tilted by apredetermined angle with respect to the optical axis La.

The light quantity controlling member 17 has a light quantity adjustingmember which comprises an ND filter or a light blocking member, forexample, for adjusting the quantity of light passing at least one of thesmall lenses of the optical integrator 6. Denoted at 18 is a drivingmechanism which is operable in response to a signal from illuminancemeasuring means (not shown) for measuring illuminance upon a maskingblade 10, a reticle 12 or a wafer 15, to move the light quantity controlmeans 17 along the plane perpendicular to the optical axis La and in theoptical axis La direction, or in a direction with tilt by apredetermined angle with respect to the optical axis La. With thisoperation, the illuminance distribution of the surface to be illuminated(such as the surface of the masking blade, of the mask, of the reticleor of the wafer) can be adjusted.

Denoted at 7 is a stop which functions to determine the shape and/orsize of the secondary light source. The stop 7 has an interchangeablestructure that, in accordance with an illumination condition, a stopchanging mechanism (actuator) 16 selectively positions one of variousstop members 7 a and 7 b on the path of light. Examples of these stopmembers are a stop with an ordinary circular aperture, a stop forquadruple-pole illumination, or a stop for small σ value illumination(usually with a circular opening). One of these stops is selected andplaced on the light path.

In this embodiment, in accordance with the size or shape of a pattern ofa mask or reticle, that is, in accordance with the type of a mark orreticle used, various stop members 7 a and 7 b are selectively used tochange the light impinging of a condenser lens 8, to thereby suitablycontrol the light intensity distribution on a pupil plane 14 of theprojection optical system 13. The condenser lens 8 serves to collectlights, emitted from the secondary light sources adjacent to the lightexit surface 6 b of the optical integrator 6 and passing through thestop 7. The collected lights are reflected by a mirror 9 and they aresuperposed one upon another on the surface of a masking blade 10 whichis a surface to be illuminated, such that the surface of the maskingblade 10 is illuminated uniformly. The masking blade 10 comprises aplurality of movable plates which are movable to define a desiredaperture shape. As a result of the structure described above, thesurface of the reticle or mask 12 and the surface of the wafer can beilluminated (exposed) uniformly.

Denoted at 11 is an imaging lens for transferring the aperture (itsshape) of the masking blade 10 onto the surface of the mask or reticle12 which is the surface to be illuminated, whereby a required region onthe mask surface or reticle surface 12 is illuminated uniformly.

Denoted at 13 is a projection optical system (projection lens) forprojecting, in a reduced scale, a circuit pattern of the mask or reticle12 onto the surface of the wafer 15 placed on a wafer chuck. Denoted at14 is a pupil plane of the projection optical system 13.

In the optical system of this embodiment, the light emitting point 1 a,the second focal point 4, the light entrance surface 6 a of the opticalintegrator 6, the masking blade 10, the reticle or mask 12, and thewafer 15 are disposed in a mutually optically conjugate relationship.Also, the stop 7 a and the pupil plane 14 are in an approximatelyoptically conjugate relation with each other.

With the structure of the present embodiment as described above, thepattern of the mask or reticle 12 is reduction-projected and printed onthe wafer 15 surface. Then, a predetermined development process iscarried out, and finally a device (semiconductor device) is produced.

In this embodiment, as disclosed in Japanese Laid-Open PatentApplication, Laid-Open No. 47626/1993 or Laid-Open No. 47640/1993, stopshaving different aperture shapes are selectively used in accordance withthe shape of a pattern of the reticle 12, to change the light intensitydistribution to be defined on the pupil plane 14 of the projectionoptical system 13, in various ways.

Next, an optical function of the light quantity control means 17 of thisembodiment will be described.

FIG. 2A is a schematic view of the light quantity controlling member 17,as seen from the light entrance side thereof. It comprises an opticalfilter having light adjusting portions 21 which are provided by NDfilters or light blocking members. FIG. 2B is a side view of a mainportion of the light quantity controlling member (optical filter) 17 andthe optical integrator 6.

The optical filter 17 of FIG. 2A has light quantity adjusting portions21 which are operationally associated with desired ones of plural smalllenses 6 c of the optical integrator 6 (in the drawing, sixty-nine smalllenses as depicted by broken lines) to adjust the quantity of lightpassing them. In FIG. 2A, there are thirteen light quantity adjustingportions 21 which are operationally associated with thirteen lenses ofthe small lenses of the optical integrator, and which comprise thirteenND filters of circular shape for reducing the quantity of light enteringthe associated lenses.

ND filters or light blocking members used in this embodiment may be madegenerally by providing a dielectric multilayered film or a metal filmsuch as Cr on a glass substrate by deposition, or alternatively, bycoloring a substrate itself with pigment, to produce a desiredtransmission factor. Other optical elements having a similar opticalproperty as that of the ND filter may be used.

In FIG. 2B, denoted at 6 c are small lenses which constitute the opticalintegrator 6. The lens surfaces 6 a of the small lenses 6 c have a rearfocal point which is at the position of the light exit side lenssurfaces 6 b. Further, the front focal point of the light entrance sidelens surfaces 6 b of the small lenses 6 c are at the position of thelight entrance side lens surfaces 6 a. As a result, the light collectedon the lens surfaces 6 a of the small lenses 6 c by means of the opticalsystem 5 emerges from the lens surfaces 6 b in the form of parallellight. These parallel lights emitted from the lens surfaces 6 b gothrough the stop 7 a and, after being collected by the condenser lens 8,they are reflected by the mirror 9 and collected on the masking blade10. In this manner, the light entrance surfaces 6 a of the opticalintegrator 6 and the masking blade 10 (the surface to be illuminated)are placed in an optically conjugate relation.

In this embodiment, the illuminance distribution formed on the surface10 to be illuminated results from superposition of illuminancedistributions at the light entrance surfaces of the small lenses 6 c. Aslong as the system is symmetrical with respect to the optical axis La,no illuminance non-uniformness is produced. Practically, however, due toflare or eccentricity of the lens system or to the coatingcharacteristic of the lenses, illuminance non-uniformness is produced onthe surface 10 illuminated FIGS. 3A-3C show an example of illuminancenon-uniformness produced upon the wafer 15 surface.

Next, basic correction of illuminance non-uniformness in this embodimentwill be explained. In a case wherein an ordinary illumination method isused, there may occur illuminance non-uniformness which may be such asshown in FIG. 3A as viewed two-dimensionally and as shown in FIG. 3B asviewed in section with respect to image height.

It is now assumed that in FIG. 3B there is an illuminance distributiondifference of 3.8% between on-axis and peripheral portions, and that thenumber of small lenses constituting the optical integrator 6 issixty-nine (69) as shown in FIG. 2A. In this case, the light quantityadjusting means 21 may comprise thirteen ND filters of circular shapefor reducing the transmission light quantity to 80%, to correct theilluminance non-uniformness.

The intensity of light passed through this circular portion isdecreased. Idealistically, there occurs a decrease of illuminance upon aplane which is optically conjugate with the transmission factoradjusting means, as follows:

{13×[1−(80/100)]/69}×100=3.8(%).

Here, the optical filter 17 is disposed at a predetermined distance Dfrom the light entrance surface 6 a of the optical integrator 6. With anincrease of distance D, the boundary between the illuminance-decreasedportion (decreased by the ND filter or light blocking member) and theportion not illuminance-decreased becomes vague. Thus, the sectionalshape of the illuminance distribution change upon the surface to beilluminated (i.e., the wafer 15 surface) is not rectangular, but it maybe a slow illuminance decrease having a gentle shape, as depicted byhatching in FIG. 3C, for example.

Since, in this embodiment, the light quantity of the small lenses isadjusted symmetrically with respect to the optical axis La, there occurssubstantially no deviation of telecentricity degree. By appropriatelydetermining the shape, size, or transmission factor of the lightquantity adjusting members (ND filters or light blocking members) aswell as the distance D thereof, as described above, a uniformilluminance distribution is provided over the whole range of the surface10 to be illuminated.

In this embodiment as described, with respect to at least one lens ofthe small lens group of the optical integrator 6. the quantity of lightimpinging on the light entrance surface 6 a, which is opticallyconjugate with the surface 10 to be illuminated, is adjusted. It is nowassumed that the number of light quantity adjusting members 21 is n, thetransmission factor is T. the number of small lenses constituting theoptical integrator 6 is N, and the illuminance on the surface to beilluminated is W. At the portions of light quantity adjusting members 21of the light quantity control means 17, light of (1−T)*n does not reachthe surface to be illuminated.

Thus, on the surface to be illuminated, in those regions substantiallycorresponding to the shape of the ND filters or light blocking membersof the light quantity control means 17, there occurs a small decrease ofilluminance such as follows:

W*n*(1−T)/N.

On the other hand, in a case wherein ring-like zone illumination, forexample, is performed, there will occur illuminance non-uniformness suchas shown in FIG. 4A as viewed two-dimensionally or as shown in FIG. 4Bas viewed in section with respect to image height. The manner ofcorrection of such illuminance non-uniformness will be described below.

In FIGS. 4A and 4B, for example, while the illuminance in theneighborhood of the on-axis portion may be high as in the case ofordinary illumination, the highest peak is deviated from the opticalaxis by a distance d1. There may be an illuminance difference of 3.8%between the illuminance at this peak portion and the peripherallow-illuminance portion. The circular region of the optical integrator 6to be eclipsed by the stop 7 a for ring-like zone illumination may besuch as shown in FIG. 5, and the number of those of the small lenses ofthe optical integrator 6 to be used for the illumination may beforty-two (42) as converted.

Under the conditions described above, the light quantity controllingmember 17 may be used to correct the illuminance non-uniformness in thefollowing manner. Idealistically, the amount of illuminance correctionas the light quantity controlling member 17 is used in this ring-likezone illumination is:

{8×[1−(80/100)]/42}×100 =3.8(%).

Here, the light quantity controlling member 17 is moved by means of thedriving mechanism, along the light entrance surface of the opticalintegrator 6 and in a direction perpendicular to the optical axis, by adistance d2 corresponding to the distance d1 on the surface 10 to beilluminated (FIG. 4D). As a result, the illuminance distribution changeon the surface 10 illuminated is such as shown in FIG. 4C, wherein it isdeviated from the optical axis. Thus, illuminance non-uniformness suchas shown in FIG. 4A or 4B can be effectively corrected.

The flow chart of FIG. 6 illustrates the procedure of correctingilluminance non-uniformness which is asymmetrical with respect to theoptical axis, in this embodiment. FIG. 7A shows the direction ofmovement of the light quantity controlling member 17.

The position coordinates of such a point that represents the largestilluminance upon the surface 10 to be illuminated as well as theilluminances at four points in the outermost peripheral portion aremeasured beforehand, and the results are used as basic data (see hatchedregions in FIG. 7B). As shown in FIG. 7A, the X coordinate and Ycoordinate are taken along a plane perpendicular to the optical axis.The light quantity controlling member 17 is moved in the X direction andY direction by a predetermined amount d0, and illuminancenon-uniformness is measured. Then, the amounts of changes in illuminanceat the largest illuminance position coordinates as well as at the fourpoints in the outermost peripheral portion of the picture field arecalculated by means of a computing device (not shown) of the projectionexposure apparatus. Then, the efficiency (amount of influence) for theamount of change as the light quantity controlling member 17 is moved isstored into memory means (not shown) of the projection exposureapparatus. Then, on the basis of this efficiency, the movement directionand movement amount for moving the light quantity controlling member 17are calculated by use of computing means (not shown) of the apparatus.

On the basis of the result of calculation, the driving means 18 is usedto move the light quantity controlling member 17 in a predetermineddirection. After movement, illuminance non-uniformness is measured againand, if an optimum value is reached, the operation is completed. Iffurther correction is necessary, the above-described procedure isrepeated to correct asymmetrical illuminance non-uniformness into a goodstate. FIGS. 7C and 7D show an example of changing the illuminancenon-uniformness correction range in the procedure described above.

The correction method described with reference to asymmetric illuminancenon-uniformness is not limited to asymmetric illuminance non-uniformnessresulting from changing the illumination mode to ring-like zoneillumination mode. It is applicable similarly to asymmetric illuminancenon-uniformness which is caused in ordinary illumination methods.

An adjusting method for a case wherein an illuminance correction amountdiffers between different illumination modes may be such that: thedistance D between the ND filter or light blocking member of the lightquantity controlling means 17 and the light entrance surface 6 a of theoptical integrator 6 is made larger, to thereby reduce the rate ofilluminance decrease on the surface 10 to be illuminated. When thedistance D between the ND filter or light blocking member and the lightentrance surface 6 a of the optical integrator 6 is enlarged, the shadowof the ND filter or light blocking member on the surface to beilluminated is blurred. Based on this, the magnitude of illuminanceadjusting range can be adjusted.

The flow chart of FIG. 8 illustrates the procedure for changing thelight quantity adjusting range in this embodiment. FIG. 9A shows themovement direction of the light quantity controlling member 17.

Illuminances at four points in the outermost peripheral portion of thesurface 10 to be illuminated as well as illuminances at four 50% pointsfrom the center to the outermost peripheral portion, are measuredbeforehand, and the results are used as basic data (see hatched regionsin FIG. 9B).

The light quantity controlling member 17 is moved along the optical axisdirection by a predetermined distance D0, and illuminancenon-uniformness is measured. The amounts of changes in illuminance atthe four points in the outermost peripheral portion of the surface to beilluminated, as well as the amounts of changes in illuminance at thefour 50% distance points from the center to the outermost peripheralportion are calculated by use of computing means (not shown) of theprojection exposure apparatus. Then, the efficiency (amount ofinfluence) as the light quantity controlling means 17 is moved ismemorized into memory means of the apparatus. Based on this efficiency,the movement direction and movement amount for moving the light quantitycontrolling means 17, along the optical axis, are calculated by use ofcomputing means of the projection exposure apparatus. If the range ofilluminance correction is to be enlarged, the distance D may beenlarged. If the range is to be reduced, the distance D may be reduced.

On the basis of the result of the calculation, the driving mechanism 18is used to move the light quantity controlling member in a predetermineddirection by a predetermined amount, whereby adjustment of illuminancedistribution is performed in a certain range of the surface to beilluminated. After movement, illuminance non-uniformness is measuredagain and, if an optimum value is reached, the operation is completed.If further correction is necessary, the above-described procedure isrepeated to correct illuminance non-uniformness into a good state. FIGS.9C and 9D show an example of changing the illuminance non-uniformnesscorrection range in the procedure described above.

Although a description has been made with respect to both an examplewhere the movement direction of the light quantity controlling member 17is along a plane perpendicular to the optical axis and an example whereit is along the optical axis direction, these corrections may beperformed simultaneously or sequentially, and it enables finecorrection. On that occasion, the procedures shown in the flow charts ofFIGS. 6 and 8 may be done in series or in parallel.

Further, although a description has been made with reference to FIGS. 6and 8 to explain procedures for optimizing illuminance non-uniformness,a mechanism (not shown) for detecting the position of the light quantitycontrolling member may be provided so that the position of the lightquantity controlling member with which the illuminance non-uniformnessis optimized may be memorized into memory means (not shown) of theprojection exposure apparatus, in relation to each of differentillumination modes (different stops). If an illumination mode for whichoptimization of illuminance non-uniformness has already been performedis selected, the position of the light quantity controlling memberhaving been stored in the memory means is read out. Then, the lightquantity controlling member is moved to that position, in the opticalaxis direction or in a direction perpendicular to the optical axis. Thisenables prompt correction of illuminance non-uniformness, without theprocedure shown in FIG. 6 or 8. The flow chart of FIG. 14 shows theprocedure according to this example.

While the foregoing description has been made with reference to exampleswherein there is a difference in illuminance non-uniformness between anordinary illumination mode and a ring-like zone illumination mode, alarge number of light quantity adjusting members such as ND filters maybe provided such as shown in FIG. 2 or 10 with optimization of thetransmission factor thereof. Then, not only for the ordinaryillumination mode and ring-like zone illumination mode but also forother illumination conditions of a small σ value as used in quadruplepole illumination or phase shift mask illumination, similar advantageousresults are attainable.

When a large number of light quantity adjusting members are used, forminimization of deviation of telecentricity level, the light quantityadjusting members may preferably be disposed revolutionallysymmetrically with respect to the center or the optical axis and at fourcorners of a square shape. Further, those light quantity adjustingmembers which are at the same distance from the center may preferablyhave the same transmission factor.

In the illumination according to grazing incidence illumination or tosmall o value illumination, as compared with ordinary illumination, thequantity of light from the optical integrator 6 decreases. This meansthat the illuminance contribution efficiency, upon the surface to beilluminated, per a single small lens of the optical integrator 6 isenlarged. For this reason, the transmission factor of the ND filter ofthe light quantity adjusting member should be determined carefully.

Next, the shape of light quantity controlling member will be explained.There may be various shapes for the light quantity controlling member,to meet the shapes of regions where illuminance distribution correctionis required. FIGS. 10A-10D show examples, like FIG. 2A. FIG. 10A showsan example wherein a circular light quantity controlling member isprovided at the center of the light quantity controlling member. Thisshape will be suitable for correction of a hot spot to be defined at thecenter of the surface to be illuminated. FIG. 10B shows an examplewherein a ring-like light quantity adjusting member is formed on thelight quantity controlling member 17. Such an adjusting member will beeffective to correction to be made in a case where ring-like zones ofthe surface illuminated have higher illuminance. FIG. 10C shows anexample wherein a light quantity adjusting member having a square shapewith a central window, of a size balanced with the size of the smalllens, is provided. This will be effective to a case where theilluminance at the peripheral portion of the surface to be illuminatedis high. FIG. 10D shows an example wherein light quantity adjustingmembers are provided at two corners along a diagonal of a square region.This will be effective to correct asymmetric illuminancenon-uniformness. As described, the shape of the light quantity adjustingmember can be optimized in accordance with the type of illuminancenon-uniformness (i.e. illuminance distribution), and uniform illuminancecan be provided on the surface to be illuminated.

On an occasion wherein, on the surface to be illuminated, there is adistribution of the different non-uniform illuminances which aredifferent in shape of illuminance distribution or different inilluminance itself, light quantity adjusting members to be used may havedifferent shapes or different transmission factors. FIG. 11 shows anexample wherein an optical filter (light quantity controlling means) 17having a combination of those light quantity controlling members such asshown in FIGS. 10A and 10D is used, as well as the illuminancedistribution to be corrected thereby, being illustratedtwo-dimensionally.

A further alternative will be described with reference to FIGS. 15A-15D.Light quantity adjusting members of circular shape having differentsizes may be used, such as shown in FIG. 15A, to correct illuminancenon-uniformness in which the illuminance decreases toward the periphery(FIG. 3B). On that occasion, with suitable setting of the distance ofthe light quantity adjusting member from the light incidence surface 6 aof the small lens of the optical integrator 6, the effects such asillustrated in FIGS. 15B and 15C are imparted to those portions of thecontrolling member, whereby correction is done with combined effects. Byappropriately changing the diameter or transmission factor of eachcircular light quantity adjusting member (i.e., by changing theilluminance adjusting range or adjusting amount shown in FIG. 15B or15C), not only the correction of an illuminance difference between thecentral portion and the peripheral portion of the surface to beilluminated but also the illuminance distribution over the whole of thesurface to be illuminated, including an intermediate region between thecentral region and the outermost peripheral region, can be optimized.Further, in place of using light quantity adjusting members of differentsizes, those light quantity adjusting members having different shapesmay be used. Alternatively, they may have both different sizes anddifferent shapes.

For the light quantity controlling member which may have various lightquantity adjusting members such as shown in FIGS. 10A-10D or in FIG. 11,the driving mechanism 18 may be used to move the light quantitycontrolling member 17 along a plane perpendicular to the optical axisand/or along the optical axis. Then, optimum correction is assured fordifferent illuminances or different illumination distributions indifferent illumination conditions or modes.

When such a light quantity controlling member is used, not the positionrepresenting the largest illuminance level of this member but rather theposition representing the smallest illuminance level may be used asdata, as in the flow chart of FIG. 6. Alternatively, use of theilluminance in the region of 50% image height of the maximum imageheight as data in the flow chart of FIG. 8 may be replaced by using theilluminance at 30% or 70% of the image height region as data. Thecorrection procedure may be optimized in this manner.

Although the embodiments described above use a Hg lamp as a light sourcefor producing an effective light source (zeroth order light source), aneffective light source can be provided by using a coherent light sourcesuch as a laser, for example.

Next, an embodiment of a device manufacturing method which uses aprojection exposure apparatus such as described above, will beexplained.

FIG. 12 is a flow chart of a procedure for the manufacture ofmicrodevices such as semiconductor chips (e.g. ICs or LSIs), liquidcrystal panels, or CCDs, for example. Step 1 is a design process fordesigning a circuit of a semiconductor device. Step 2 is a process formaking a mask on the basis of the circuit pattern design. Step 3 is aprocess for preparing a wafer by using a material such as silicon. Step4 is a wafer process which is called a pre-process wherein, by using theso prepared mask and wafer, circuits are practically formed on the waferthrough lithography. Step 5 subsequent to this is an assembling stepwhich is called a post-process wherein the wafer having been processedby step 4 is formed into semiconductor chips. This step includes anassembling (dicing and bonding) process and a packaging (chip sealing)process. Step 6 is an inspection step wherein an operation check, adurability check and so on for the semiconductor devices provided bystep 5, are carried out. With these processes, semiconductor devices arecompleted and they are shipped (step 7).

FIG. 13 is a flow chart showing details of the wafer process. Step 11 isan oxidation process for oxidizing the surface of a wafer. Step 12 is aCVD process for forming an insulating film on the wafer surface. Step 13is an electrode forming process for forming electrodes upon the wafer byvapor deposition. Step 14 is an ion implanting process for implantingions to the wafer. Step 15 is a resist process for applying a resist(photosensitive material) to the wafer. Step 16 is an exposure processfor printing, by exposure, the circuit pattern of the mask on the waferthrough the exposure apparatus described above. Step 17 is a developingprocess for developing the exposed wafer. Step 18 is an etching processfor removing portions other than the developed resist image. Step 19 isa resist separation process for separating the resist material remainingon the wafer after being subjected to the etching process. By repeatingthese processes, circuit patterns are superposedly formed on the wafer.

With these processes, high density microdevices can be manufactured.

While the invention has been described with reference to the structuresdisclosed herein, it is not confined to the details set forth and thisapplication is intended to cover such modifications or changes as maycome within the purposes of the improvements or the scope of thefollowing claims.

What is claimed is:
 1. A device manufacturing method, comprising thesteps of: illuminating an original with light from a light source,including blocking with a light quantity adjusting film, formed on atransparent substrate disposed juxtaposed to a light entrance surface ofan optical integrator having a plurality of lenses, a portion of lightdirected to at least one of the plurality of lenses; and projecting apattern of the original by a projection optical system illuminated withthe light onto a substrate to be exposed, wherein the light quantityadjusting film has at least one portion which is provided in relation tothe at least one lens of said plurality of lenses and the transparentsubstrate is movable in a direction intersecting an optical axis tothereby change a light quantity distribution on a light entrance surfaceof the at least one lens so as to change an illuminance distribution ona plane to be illuminated.
 2. A device manufacturing method according toclaim 1, wherein the original is a mask.
 3. A device manufacturingmethod according to claim 1, wherein the transparent substrate is alsomovable in a direction of the optical axis.
 4. A device manufacturingmethod according to claim 3, wherein the direction intersecting theoptical axis is perpendicular to the optical axis.
 5. A devicemanufacturing method according to claim 4, wherein said transparentsubstrate is also movable in the direction of the optical axis.
 6. Adevice manufacturing method according to claim 1, wherein said lightquantity adjusting film comprises one of a light blocking member and anND filter.
 7. A device manufacturing method according to claim 1,wherein said light quantity adjusting film has a plurality of portionseach of which is provided in relation to an associated one of differentlenses of said plurality of lenses.
 8. A device manufacturing methodaccording to claim 7, wherein said plurality of portions has two typesof light quantity adjusting films which are different from each otherwith respect to at least one of shape and size.
 9. A devicemanufacturing method according to claim 1, further comprising measuringan illuminance distribution of light from said optical integrator, uponone of a predetermined plane where the original is placed and a planeoptically conjugate with said predetermined plane, wherein saidtransparent substrate is moved in accordance with a measurement.
 10. Adevice manufacturing method according to claim 9, wherein a variablestop disposed at a light exit side of said optical integrator, changesat least one of shape and size of a secondary light source to be definedwith light from said optical integrator, and said transparent substrateis moved in accordance with a change of said secondary light source insize or shape.
 11. A device manufacturing method according to claim 1,wherein a variable stop disposed at a light exit side of said opticalintegrator, changes at least one of shape and size of a secondary lightsource to be defined with light from said optical integrator, and saidtransparent substrate is moved in accordance with a change of saidsecondary light source in size or shape.
 12. A device manufacturingmethod according to claim 1, wherein lights from said plurality oflenses of said optical integrator illuminate the same portion of theoriginal, and wherein the light entrance side of said optical integratorand a plane where the original is placed are optically conjugate witheach other.
 13. A device manufacturing method according to claim 1,wherein the light source comprises a lamp.
 14. A device manufacturingmethod according to claim 1, wherein the light source comprises a laser.15. A device manufacturing method according to claim 1, wherein the atleast one portion of the light quantity adjusting film comprises adot-like film.
 16. A device manufacturing method according to claim 15,wherein said dot-like film has one of a rectangular shape, a circularshape and a fan shape.
 17. A device manufacturing method according toclaim 1, wherein the at least one portion of the light quantityadjusting film comprises a dot-like opening.
 18. A device manufacturingmethod according to claim 17, wherein said dot-like opening has aring-like shape.
 19. A device manufacturing method in which a substratewith a pattern of an original is exposed, comprising the step of:illuminating the original including blocking with a light quantityadjusting film, formed on a transparent substrate disposed juxtaposed toa light entrance surface of an optical integrator having a plurality oflenses, a portion of light directed to at least one lens of theplurality of lenses, wherein said light quantity adjusting film includesat least one portion which is provided in relation to the at least onelens of said plurality of lenses and the transparent substrate ismovable in a direction intersecting an optical axis to change a lightquantity distribution on a light entrance surface of the at least onelens so as to change an illuminance distribution on a plane to beilluminated.
 20. A device manufacturing method according to claim 19,wherein the at least one portion of the light quantity adjusting filmcomprises a dot-like film.
 21. A device manufacturing method accordingto claim 20, wherein said dot-like film has one of a rectangular shape,a circular shape and a fan shape.
 22. A device manufacturing methodaccording to claim 19, wherein the at least one portion of the lightquantity adjusting film comprises a dot-like opening.
 23. A devicemanufacturing method according to claim 22, wherein said dot-likeopening has a ring-like shape.
 24. A device manufacturing method,comprising the step of: blocking a portion of light directed to at leastone lens of an optical integrator having a plurality of lenses by alight quantity adjusting film of a transparent substrate disposedjuxtaposed to a light entrance surface of the optical integrator,wherein the light quantity adjusting film includes at least one portionwhich is provided in relation to the at least one lens of the pluralityof lenses and the transparent substrate is movable in a directionintersecting an optical axis to thereby change a light quantitydistribution on a light entrance surface of the at least one lens so asto change an illuminance distribution on a plane to be illuminated. 25.A device manufacturing method according to claim 24, wherein theoriginal is a mask.
 26. A device manufacturing method according to claim24, wherein the at least one portion of the light quantity adjustingfilm comprises a dot-like film.
 27. A device manufacturing methodaccording to claim 26, wherein said dot-like film has one of arectangular shape, a circular shape and a fan shape.
 28. A devicemanufacturing method according to claim 24, wherein the at least oneportion of the light quantity adjusting film comprises a dot-likeopening.
 29. An apparatus according to claim 28, wherein said dot-likeopening has a ring-like shape.